| PART |
Description |
Maker |
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
| CPD93V |
High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| LT3845A LT3844 LTC3891 LT3741 LT37241 LTC3835-1 LT |
High Voltage, Current Mode Switching Regulator Controller Thermal Shutdown
High Voltage, Current Mode Switching Regulator Controller; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 85°C 0.3 A SWITCHING CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDSO16
High Voltage, Current Mode Switching Regulator Controller
|
Linear Technology, Corp.
|
| LRB520S-30T1G-11 |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
Leshan Radio Company
|
| CMPD5001 CMPD5001S CMPD500110 CMPD5001-TR |
SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE
|
Central Semiconductor Corp.
|
| CPH5504 |
High-Current Switching Applications 大电流开关应
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| IKW75N65ES5-15 |
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
|
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| BUP314D Q67040-A4226-A2 |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor Group
SIEMENS AG
|
| 2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
